GATE question papers: Electronics and Communication Engineering 2007 (EC)
Q.1
- Q.20 Carry One Mark Each
1. If E denotes expectation, the variance of a
random variable X is given by
(A) E[X2] - E2 [X] (B) E[X2] + E2[X2] (C) E[X2] (D) E2 [X]
2. The
following plot shows a function y which varies linearly with x. The value of the
integral I =
is

(A) 1.0 (B) 2.5 (C) 4.0 (D) 5.0
3. For |x|<< 1, coth (x) can be
approximated as
(A) X (B) X2 (C)
(D) 
4.
is:
(A) 0.5 (B) 1 (C) 2 (D) not
defined
5. Which one
of the following functions is strictly bounded?
(A)
(B) ex (C) x2 (D)
6. For the function e-x, the linear approximation around x
= 2 is:
(A) (3 -x)
e-2
(B) 1 -
x
(C)
(D) e-2
7. An
independent voltage source in series with an impedance Zs = Rs + jXs delivers a
maximum average power to a load impedance ZL when
(A) ZL = Rs +
jXs (B) ZL
= Rs (C) ZL
= jXs (D) ZL = Rs - jXs
8. The RC circuit shown in the figure is
(A) a
low-pass filter (B) a high-pass
filter
(C) a
band-pass filter (D) a band-reject
filter
9. The electron and hole concentrations in an
intrinsic semiconductor are ni per cm3 at 300 K. Now, if acceptor impurities are introduced
with a concentration of NA per cm3
(where N >> n), the electron concentration per cm3 at 300 K will be
(A) ni (B) ni
+ NA (C) NA - ni (D)
10. In a p+
n junction diode under reverse bias, the magnitude of electric field is maximum
at
(A) the
edge of the depletion region on the p-side
(B) the
edge of the depletion region on the n-side
(C) the
p+ n junction
(D) the
centre of the depletion region on the n-side
11. The
correct full wave rectifier circuit is:


12. In a
transconductance amplifier, it is desirable to have
(A) a
large input resistance and a large output resistance
(B) a
large input resistance and a small output resistance
(C) a
small input resistance and a large output resistance
(D) a
small input resistance and a small output resistance
13. X = 01110
and Y = 11001 are two 5-bit binary numbers represented in two's complement
format. The sum of X and Y represented in two's complement format using 6 bits
is:
(A) 100111
(B) 001000 (C) 000111 (D) 101001
14. The
Boolean function Y = AB + CD is to be realized using only 2-input NAND gates.
The minimum number of gates required is:
(A) 2
(B) 3 (C) 4 (D)
5
15. If the
closed-loop transfer function of a control system is given as
T(s)
=
,
then it is
(A) an
unstable system (B) an uncontrollable
system
(C) a
minimum phase system (D) a non-minimum phase
system
16. If the Laplace transform of a signal y (t) is
Y(s) =
,
then its final value is:
(A) -1 (B) 0 (C) 1 (D) unbounded
17. If R (
)
is the autocorrelation function of a real, wide-sense stationary random
process, then which of the following is NOT true?
(A) R (
)
= R (-
)
(B) |R (
)|
£ R (0)
(C) R (
)
= -R (-
)
(D) The mean square value of the
process is R (0)
18. If S (f) is the power spectral density of a
real, wide-sense stationary random process, then which of the following is
ALWAYS true?
(A) S (0) ³ S (f) (B) S
(f) ³ 0
(C) S (-f)
= -S (f) (D)
19. A plane wave of wavelength l is traveling in a direction making an angle
30° with positive x-axis and 90° with positive y-axis. The 
field
of the plane wave can be represented as (E0 is constant)
(A)
=
(B)
=
(C)
=
(D)
= 
20. If C is a closed curve enclosing a surface S,
then the magnetic field intensity
,
the current density
and
the electric flux density
are
related by
(A)
(B) 
(C)
(D) 
Q.
21 - Q.75 carry Two Marks Each
21. It is given that X1, X2.....XM
are M non-zero, orthogonal vectors. The dimension of the vector space spanned
by the 2M vectors X1, X2.....XM, -X1, -X2.....-XM is:
(A) 2M (B) M
+ 1
(C) M (D) dependent
on the choice of X1, X2.....XM
22. Consider the function f (x) = x2 -
x - 2. The maximum value of f (x) in
the closed interval [-4, 4] is:
(A) 10 (B) 10 (C) -2.25 (D) indeterminate
23. An
examination consists of two papers, Paper 1 and Paper 2. The probability of failing
in Paper 1 is 0.3 and that in Paper 2 is 0.2. Given that a student has failed in
Paper 2, the probability of failing in Paper 1 is 0.6. The probability of a
student failing in both the papers is:
(A) 0.5
(B) 0.18 (C) 0.12 (D)
0.06
24. The solution of the differential equation
under
the boundary conditions (i) y = y1 at
x = 0 and (ii) y = y2 at x =„, where k, y1 and y2
are constants, is
(A) y = (y1 -y2) exp (-x/k2) + y2 (B) y
= (y2 -y1) exp (-x/k) + y1
(C) y = (y1 -y2) sinh (x/k) + y1 (D) y
= (y1 -y2)
exp (-x/k) + y2
25. The equation x3 - x2 + 4x -
4 = 0 is to be solved using the Newton-Raphson method. If x = 2 is taken as the
initial approximation of the solution, then the next approximation using this
method will be:
(A)
(B)
(C) 1 (D)
26. Three functions f1 (t), f2
(t) and f3 (t), which are zero outside the interval [0, T], are
shown in the figure. Which of the following statements is correct?
(A) f1 (t) and f2
(t) are orthogonal (B) f1 (t) and f3
(t) are orthogonal
(C) f2 (t) and f3
(t) are orthogonal (D) f1 (t) and f2
(t) are orthonormal
27. If
the semi-circular contour D of radius 2 is as shown in the figure, then the
value of the integral
ds
is:
(A) jp (B) -jp (C) -p (D) p
28. Two series resonant filters are as shown in
the figure. Let the 3-dB bandwidth of Filter 1be B1 and that of
Filter 2 be B2. The value of 
is:

(A) 4 (B) 1 (C)
(D) 
29. For the circuit shown in the figure, the
Thevenin voltage and resistance looking into X-Y are:

(A)
2W (B) 2V,
W (C) 
W (D) 4V, 2W
30. In
the circuit shown, Vc is 0 volts at t = 0 sec. For t > 0, the
capacitor current ic (t), where t is in seconds, is given by

(A) 0.50 exp (-25t) mA (B) 0.25 exp (-25t) mA
(C) 0.50 exp (-12.5t) mA (D) 0.25 exp (-6.25t) mA
31. In the AC network shown in the figure, the
phasor voltage VAB (in volts) is:

(A) 0 (B) 5Š30° (C) 12.5Š30° (D) 17Š30°
32. A p+
n junction has a built-in potential of 0.8 V. The depletion layer width at a
reverse bias of 1.2V is 2 m. For a reverse bias of 7.2 V, the depletion layer width
will be:
(A) 4
m (B) 4.9 m (C) 8 m (D)
12 m
33. Group I
lists four types of p-n junction diodes. Match each device in Group I with one
of the option in Group II to indicate the bias condition of that device in its normal
mode of operation.
Group
I Group II
(P)
Zener Diode (1) Forward bias
(Q)
Solar cell (2) Reverse bias
(R)
LASER diode
(S)
Avalanche Photodiode
(A) P
- 1 Q - 2 R - 1 S - 2
(B) P
- 2 Q - 1 R - 1 S - 2
(C) P
- 2 Q - 2 R - 1 S - 1
(D) P
- 2 Q - 1 R - 2 S - 2
34. The DC
current gain (b) of a BJT is 50. Assuming that the emitter
injection efficiency is 0.995, the base transport factor is:
(A) 0.980
(B) 0.985 (C) 0.990 (D)
0.995
35. Group I
lists four different semiconductor devices. Match each device in Group I with
its characteristic property in Group II.
Group
I Group II
(P)
BJT (1) Population inversion
(Q)
MOS capacitor (2) Pinch-off voltage
(R)
LASER diode (3) Early effect
(S)
JFET (4) Flat-band voltage
(A) P
- 3 Q - 1 R - 4 S - 2
(B) P
- 1 Q - 4 R - 3 S - 2
(C) P
- 3 Q - 4 R - 1 S - 2
(D) P
- 3 Q - 2 R - 1 S - 4
36. For the Op-Amp circuit shown in the figure, V0
is
(A) -2
V (B) -1 V (C) -0.5 V (D) 0.5 V
37. For
the BJT circuit shown, assume that the b
of the transistor is very large and VBE = 0.7V. The mode of
operation of the BJT is:

(A) cut-off
(B) saturation
(C) normal
active
(D) reverse
active
38. In the Op-Amp circuit shown, assume that the
diode current follows the equation I = Is exp (V/VT). For
Vi = 2V, V0 = V01, and for Vi = 4V,
V0 = V02. The relationship between V01 and V02
is:
(A) V02 =
V01 (B) V02
= e2V01
(C) V02 = V01
ln 2 (D) V01 - V02 = VT ln 2
39. In
the CMOS inverter circuit shown, if the transconductance parameters of the NMOS
and PMOS transistors are kn = kp = mn Cox
=
mp Cox
=40
m A/V2 and their threshold voltages are VTHM = |VTHP|
= 1V, the current I is:

(A) 0 A (B) 25 mA (C) 45 mA (D) 90 mA
40. For the Zener diode shown in the
figure, the Zener voltage at knee is 7V, the knee current is negligible and the
Zener dynamic resistance is 10W . If the
input voltage (Vi) range
is from 10 to 16V, the output voltage (V0) ranges from

(A) 7.00 to 7.29 V (B) 7.14
to 7.29 V
(C) 7.14 to 7.43 V (D) 7.29
to 7.43 V
41. The Boolean expression y =
can
be minimized to
(A) y =
(B) y
= 
(C) y =
(D) y
=
42. The
circuit diagram of a standard TTL NOT gate is shown in the figure. When Vi
= 2.5 V, the modes of operation of the
transistors will be:
(A) Q1 :reverse active; Q2
:normal active; Q3 :saturation; Q4 :cut-off
(B) Q1 :reverse active; Q2
:saturation; Q3 :saturation; Q4 :cut-off
(C) Q1 :normal active; Q2
:cut-off; Q3 :cut-off; Q4 :saturation
(D) Q1 : saturation; Q2
: saturation; Q3 :saturation; Q4 : normal active
43. In
the following circuit, X is given by

(A) X =
(B) X
= 
(C) X=
(D) X
=
44. The
following binary values were applied to the X and Y inputs of the NAND latch shown
in the figure in the sequence indicated below:
X = 0, Y = 1; X = 0, Y = 0; X
=1, Y =1.
(A) P = 1, Q = 0; P = 1, Q = 0; P
= 1, Q = 0 or P = 0, Q = 1
(B) P = 1, Q = 0; P = 0, Q = 1;
or P = 0, Q = 1; P = 0, Q = 1
(C) P = 1, Q = 0; P = 1, Q = 1; P
= 1, Q = 0 or P = 0, Q = 1
(D) P = 1, Q = 0; P = 1, Q = 1; P
= 1, Q = 1
45. For the circuit shown, the counter state (Q1Q0)
follows the sequence
(A) 00, 01, 10, 11, 00.... (B) 00,
01, 10, 00, 01....
(C) 00, 01, 11, 00, 01.... (D) 00,
10, 11, 00, 10....
46. An 8255
chip is interfaced to an 8085 microprocessor system as an I/O mapped I/O as
shown in the figure. The address lines A0 and A1 of the 8085 are used by the 8255 chip to decode internally its three
ports and the Control register. The address line A3 to A7
as well as the IO/
signal
are used for address decoding. The range of addresses for which the 8255 chip
would get selected is:

(A) F8H - FBH (B) F8H
- FCH (C) F8H - FFH (D) F0H - F7H
47. The 3-dB
bandwidth of the low-pass signal e-t u (t), where u (t) is the unit step function, is
given by
(A)
HZ (B)
HZ (C) „ (D) 1 HZ
48. A Hilbert
transformer is a
(A) non-linear
system (B) non-causal system
(C) time-varying
system (D) low-pass system
(A) (B) (C) (D)
49. The frequency response of a linear,
time-invariant system is given by
H (f) =
.
The step response of the system is:
(A) 5 (1 - e-5t) u
(t) (B) 5
u (t)
(C)
(1
- e-5t)
u (t) (D) 
u (t)
50. A 5-point sequence [n] is given as
x [-3] = 1, x[-2] = 1, x[-1] = 0, x[-0]
= 5, x[1] = 1,
Let X (ejw) denote the discrete-time Fourier
transform of x [n]. The value of
w
is:
(A) 5 (B) 10p (C) 16p (D) 5 + j10p
51. The z-transform X [z] of a sequence x [n] is
given by X [z] =
.
It is given that the region of convergence of X [z] includes the unit circle.
The value of x [0] is:
(A) -0.5 (B) 0 (C) 0.25 (D) 0.5
52. A control
system with a PD controller is shown in the figure. If the velocity error constant
KV = 1000 and the damping
ratio z = 0.5, then the values of KP
and KD are:
(A) KP
= 100, KD =0.09 (B) KP = 100, KD =0.9
(C) KP
= 10, KD =0.09 (D) KP = 10, KD =0.9
53. The transfer function of a plant is T (s) =
.
The second-order approximation of T (s) using dominant pole concept is:
(A)
(B) 
(C)
(D) 
54. The open-loop transfer function of a plant is
given as G (s) =
.
If the plant is operated in a unity feedback configuration, then the lead
compensator that an stabilize this control system is:
(A)
(B) 
(C)
(D)
55. A unity feedback control system has an
open-loop transfer function G (s) =
.
The gain K for which s = -1 +j1 will
lie on the root locus of this system is:
(A) 4 (B) 5.5 (C) 6.5 (D) 10
56. The asymptotic Bode plot of a transfer
function is as shown in the figure. The transfer function G (s) corresponding
to this Bode plot is:
(A)
(B)
(C)
(D) 
57. The state space representation of a
separately excited DC servo motor dynamics is given as

(A)
(B)
(C)
(D)
58. In delta modulation, the slope overload
distortion can be reduced by
(A) decreasing the step size
(B) decreasing the granular noise
(C) decreasing the sampling rate
(D) increasing the step size
59. The raised cosine pulse p (t) is used for
zero ISI in digital communications. The expression for p (t) with unity
roll-off factor is given by p (t) =
.
The value of p (t) at t
is:
(A) -0.5 (B) 0 (C) 0.5 (D) „
60. In the following scheme, if the spectrum M
(f) of m (t) is as shown, then the spectrum Y (f) of y (t) will be:
61. During
transmission over a certain binary communication channel, bit errors occurs independently
with probability p. The probability of AT MOST one bit in error in a block of n
bits is given by
(A) Pn (B) 1
- Pn
(C) np (1 -p)n-1
+ (1 -p)n (D) 1 - (1 -
p)n
62. In a GSM
system, 8 channels can co-exist in 200 KHz bandwidth using TDMA. A GSM based
cellular operator is allocated 5 MHz bandwidth. Assuming a frequency reuse
factor of
,
i.e. a five-cell repeat pattern, the maximum number of simultaneous channels
that can exist in one cell is:
(A) 200
(B) 40 (C) 25 (D)
5
63. In a
Direct Sequence CDMA system the chip rate is 1.2288 × 106
chips per second. If the processing gain is desired to be AT LEAST 100, the
data rate
(A) must
be less than or equal to 12.288 × 103 bits per sec
(B) must
be greater than 12.288 × 103 bits per sec
(C) must
be exactly equal to 12.288 × 103 bits per sec
(D) can
take any value less than 12.288 × 103 bits per sec.
64. An air-filled rectangular waveguide has inner
dimensions of 3 cm “ 2 cm. The wave
impedance of the TE20 mode of propagation in the waveguide at a
frequency of 30 GHz is (free space impedance
h0
= 377W)
(A) 308 W (B) 355 W (C) 400
W (D) 461 W
65. The
field
(in A/m) of a plane wave propagating in free space is given by
.
The time average power flow density in watts
is:
(A)
(B)
(C)
(D) 
66. The
field
in rectangular waveguide of inner dimensions a “
b is given by
.
Where H0 is a constant, and a and
b are the dimensions along the x-axis and the y-axis respectively. The mode of
propagation in the waveguide is:
(A) TE20 (B) TM11 (C) TM20 (D) TE10
67. A load of
50W is connected in shunt in a 2-wire transmission line of Z0 = 50W as shown in the figure. The 2-port scattering
parameter matrix (S-matrix) of the shunt element is:
(A)
(B)
(C)
(D)
68. The
parallel branches of a 2-wire transmission line are terminated in 100W and 200W
resistors as shown in the figure. The characteristic impedance of the line is Z0
= 50W and each section has a length of
.
The voltage reflection coefficient G at
the input is:
(A) -j
(B)
(C) j
(D) 
69. A
dipole
is kept horizontally at a height of
above
a perfectly conducting infinite ground plane. The radiation pattern in the
plane of the dipole (
plane)
looks approximately as
70. A right
circularly polarized (RCP) plane wave is incident at an angle of 60° to the normal,
on an air-dielectric interface. If the reflected wave is linearly polarized, the
relative dielectric constant er2 is:
(A)
(B)
(C) 2 (D) 3
Common Data Questions
Common Data for Questions 71, 72, 73:
The
figure shows the high-frequency capacitance-voltage (C-V) characteristics of a
Metal/SiO2/silicon (MOS) capacitor having an area of 1“ 10-4
cm2. Assume that the
permittivities (e0er) of
silicon and SiO2 are 1“ 10-12 F/cm and 3.5“ 10-13
F/cm respectively.

71. The gate oxide thickness in the MOS capacitor
is:
(A) 50 nm (B) 143
nm (C) 350 nm (D) 1 mm
72. The maximum depletion layer width in silicon
is
(A) 0.143 mm (B) 0.857 mm (C) 1
mm (D) 1.143 mm
73. Consider the following statements about the
C-V characteristics plot:
S1: The MOS capacitor has an n-type
substrate,
S2: If positive charges are introduced in
the oxide, the C-V plot will shift to the left.
Then which of the following is true?
(A) Both S1 and S2 are true (B) S1
is true and S2 is false
(C) S1 is false and S2 is true (D) Both
S1 and S2 are false
Common Data for Questions 74, 75:
Two 4-ray signal
constellations are shown. It is given that f1
and f2 constitute an
orthonormal basis for the two constellations. Assume that the four symbols in
both the constellations are equiprobable. Let
denote
the power spectral density of white Gaussian noise.
74. The ratio of the average energy of
constellation 1 to the average energy of constellation 2 is:
(A) 4a2 (B) 4 (C) 2 (D) 8
75. If these
constellations are used for digital communications over an AWGN channel, then
which of the following statements is true?
(A) Probability
of symbol error for Constellation 1 is lower
(B) Probability
of symbol error for Constellation 1 is higher
(C) Probability
of symbol error is equal for both the constellations
(D) The
value of N0 will
determine which of the two constellations has a lower probability of symbol
error.
Linked
Answer Questions: Q.76 to Q.85 Carry Two Marks Each
Statement for Linked Answer Questions 76 & 77:
Consider the Op-Amp circuit shown in the figure.

76. The transfer function V0 (s)/Vi
(s) is:
(A)
(B)
(C)
(D)
77. If Vi = V1 sin (wt) and V0 = V2 sin (wt +f),
then the minimum and maximum values of f
(in radians) are respectively
(A)
(B)
(C) -p
and 0 (D) 
Statement for Linked Answer Questions 78 & 79:
An 8085 assembly language program is given below:
Line 1: MVI A, B5H
2: MVI B, 0EH
3: XRI 69H
4: ADD B
5: ANI 9BH
6: CPI 9BH
7: STA 3010H
8: HLT
78. The contents of the accumulator just after
execution of ADD instruction in line 4 will be
(A) C3H (B) EAH (C) DCH (D) 69H
79. After execution of line 7 of the program, the
status of the CY and Z flags will be
(A) CY = 0, Z = 0 (B) CY =
0, Z = 1 (C) CY = 1, Z = 0 (D) CY = 1, Z = 1
80. The eigenvalue and eigenvector pairs (li, vi) for the system
are
(A)
(B) 
(C)
(D) 
81. The system matrix A is:
(A)
(B)
(C)
(D) 
Statement for Linked Answer Questions 82 & 83:
An
input to a 6-level quantizer has the probability density function f (x) as
shown in the figure. Decision boundaries of the quantizer are chosen so as t
maximize the entropy of the quantizer output. It is given that 3 consecutive
decision boundaries are '-1', '0' and
'1'.

82. The values of a and b are:
(A) a =
and
b =
(B) a
=
and
b =
(C) a =
and
b =
(D) a
=
and
b =
83. Assuming that the reconstruction levels of
the quantizer are the mid-points of the decision boundaries, the ratio of
signal power to quantization noise power is:
(A)
(B)
(C)
(D) 28
Statement for Linked Answer Questions 84 & 85:
In the Digital-to-Analog converter circuit shown in the
figure below, VR = 10 V and R = 10kW.
84. The current i is:
(A) 31.25 mA (B) 62.5 mA (C) 125
mA (D) 250 mA
85. The voltage V0 is:
(A) -
0.781 V (B) - 1.562 V (C) - 3.125 V (D) - 6.250 V